PART |
Description |
Maker |
4MBI300VG-120R-50 4MBI450VB-120R1-50 |
Power Devices (IGBT)
|
ETC
|
AUIRS2112S AUIRS2112S-15 |
Drives IGBT/MOSFET power devices
|
International Rectifier
|
AUIRS2336STR AUIRS2336S-15 |
3-PHASE BRIDGE DRIVER IC Drives up to six IGBT/MOSFET power devices
|
International Rectifier
|
PLC18V8ZIADH PLC18V8ZIDB PLC18V8Z25A PLC18V8ZIAA P |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PQCC20 Zero standby power CMOS versatile PAL devices OT PLD, 40 ns, PDSO20 Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PDSO20
|
NXP Semiconductors N.V.
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
CY8C41223-24SXI CY8C41123-24SXI CY8C41123-24SXIT C |
Linear Power PSoC垄芒 Devices Linear Power PSoC Devices Linear Power PSoC?/a> Devices
|
Cypress Semiconductor http://
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
APT40GP90J |
MOSFET POWER MOS 7 IGBT 68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology] Advanced Power Electronics, Corp.
|
APT11GP60K APT11GP60SA |
MOSFET POWER MOS 7 IGBT 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo... Advanced Power Technology MICROSEMI POWER PRODUCTS GROUP
|
APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|